Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
2. Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA
Funder
Office of Naval Research (ONR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4983767
Reference40 articles.
1. Band parameters for nitrogen-containing semiconductors
2. Strongly nonparabolic variation of the band gap in InxAl1−xN with low indium content
3. Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy
4. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates
5. GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
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1. The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation;Advanced Electronic Materials;2021-10-20
2. High breakdown voltage AlGaN/GaN HEMTs with a dipole layer for microwave power applications;Micro & Nano Letters;2019-05
3. Ammonia Molecular Beam Epitaxy of III-Nitrides;Molecular Beam Epitaxy;2019-02-08
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