High breakdown voltage AlGaN/GaN HEMTs with a dipole layer for microwave power applications-Reference-Cited by-同舟云学术

High breakdown voltage AlGaN/GaN HEMTs with a dipole layer for microwave power applications

Published:2019-05 Issue:5 Volume:14 Page:488-492
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Du Jiangfeng¹,Li Xiaoyun¹,Bai Zhiyuan¹,Liu Yong¹,Yu Qi¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.5556

Reference29 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

3. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

4. Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

5. Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior

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2. Study of GaN-Based Superjunction CAVET with Dipole Layer to Further Improve On-Resistance and Breakdown Voltage;Journal of Electronic Materials;2021-10-26

3. Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04