Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications-Reference-Cited by-同舟云学术

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Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications

Published:2020-04 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Putcha V.,Bury E.,Franco J.,Walke A.,Zhao S.E.,Peralagu U.,Zhao M.,Alian A.,Kaczer B.,Waldron N.,Linten D.,Parvais B.,Collaert N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9125439/9128217/09129251.pdf?arnumber=9129251

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental study of MISHEMT from 450 K down to 200 K for analog applications;Solid-State Electronics;2023-10

2. Experimental Analysis of MISHEMT Multiple Conductions from 200K to 450K;2022 36th Symposium on Microelectronics Technology (SBMICRO);2022-08-22

3. ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs;IEEE Transactions on Electron Devices;2022-04

4. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer;IEEE Journal of the Electron Devices Society;2022

5. Design of a Single Gate Metal Oxide Semiconductor High Electron Mobility Transistor with a Cavity Under the Gate;2021 IEEE International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE);2021-12-04

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