Author:
Agopian P.G.D.,Carmo G.J.,Martino J.A.,Simoen E.,Peralagu U.,Parvais B.,Waldron N.,Collaert N.
Funder
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
Conselho Nacional de Desenvolvimento Científico e Tecnológico
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT;Gupta,2016
2. Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT;Panda;J Semicond,2016
3. An overview of normally-off GaN-based High Electron Mobility Transistors;Roccaforte;Materials,2019
4. Special contribution invention of High Electron Mobility Transistor (HEMT) and contribution to information and communications field;Mimura;Fijitsu Sci Techn J,2018
5. Handbook for III-V high electron mobility transistor technologies;Nirmal,2019
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献