Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms
Author:
Affiliation:
1. University of Sao Paulo,LSI/PSI/USP,Sao Paulo,Brazil
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10302454/10302463/10302593.pdf?arnumber=10302593
Reference8 articles.
1. Influence of multiple conduction channels on MISHEMT’s intrinsic voltage gain;canales;Symposium on Microelectronics Technology and Devices (SBMicro),2022
2. Transient effects in accumulation mode p-channel SOI MOSFET's operating at 77 K
3. The conduction mechanisms analysis of AlGaN/GaN MOSHEMTs with different source/drain electrode configurations
4. Handbook for III-V High Electron Mobility Transistor Technologies
5. Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C
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