Study of GaN-Based Superjunction CAVET with Dipole Layer to Further Improve On-Resistance and Breakdown Voltage-Reference-Cited by-同舟云学术

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Study of GaN-Based Superjunction CAVET with Dipole Layer to Further Improve On-Resistance and Breakdown Voltage

Published:2021-10-26 Issue:1 Volume:51 Page:110-118
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Ma Jiancheng,Guo Zhiyou^ORCID,Sun Huiqing,Li Yuan,Zhang Miao,Xia Xiaoyu,Xia Fan,Tan Xiuyang,Huang Zhihui,Ding Xiao,Wang Penglin

Funder

Key-Area Research and Development of Guangdong Province

Foshan Science and Technology Bureau

Guangdong Science and Technology Project

Guangzhou Science and Technology Program Key Projects

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-021-09267-y.pdf

Reference23 articles.

1. B.J. Baliga, Gallium nitride devices for power electronic applications. Semicond. Sci. Technol. 28, 074011 (2013).

2. S. Chowdhury, B.L. Swenson, M.H. Wong, and K. Mishra, Current status and scope of gallium nitride-based vertical transistors for high-power electronics application. Semicond. Sci. Technol. 28, 074014 (2013).

3. Y. Zhang, M. Sun, Z. Liu, and D. Piedra, Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors. IEEE Trans. Electron Devices 60, 2224 (2013).

4. O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Eieger, and J. Hilsenbeck, Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85, 3222 (1999).

5. D. Ji, M.A. Laurent, A. Agarwal, W. Li, S. Mandal, S. Keller, and S. Chowdhury, Normally OFF trench CAVET with active Mg-doped GaN as current blocking layer. IEEE Trans. Electron Devices 64, 805 (2017).

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