N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates-Reference-Cited by-同舟云学术

N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates

Published:2015-04-16 Issue:5 Volume:30 Page:055012
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ahmadi Elaheh,Wu Feng,Li Haoran,Kaun Stephen W,Tahhan Maher,Hestroffer Karine,Keller Stacia,Speck James S,Mishra Umesh K

Funder

Office of Naval Research

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=5/a=055012/pdf

Reference36 articles.

1. N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess

2. A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

3. N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax

4. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

5. AlGaN/GaN high electron mobility transistors with InGaN back-barriers

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1. Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire;Materials Science in Semiconductor Processing;2023-03

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3. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01

4. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability;IEEE Transactions on Electron Devices;2023

5. Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles;Applied Physics Letters;2021-08-16