N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz f<inf>T</inf> and 405 GHz f<inf>max</inf>-Reference-Cited by-同舟云学术

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N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax

Published:2013-06 Issue: Volume: Page:
ISSN:
Container-title:71st Device Research Conference
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Author:

Denninghoff D.,Lu J.,Ahmadi E.,Keller S.,Mishra U. K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6596467/6633759/06633861.pdf?arnumber=6633861

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