Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications
Author:
Affiliation:
1. Kalasalingam Academy of Research and Education,Department of ECE,Krishnankoil,India
2. Jyothi Engineering College,Department of ECE,Kerala,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10560478/10560483/10560584.pdf?arnumber=10560584
Reference21 articles.
1. N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz
2. Study of Ga-Polar and N-Polar GaN-Based Green VCSELs by Simulation
3. N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
4. Performance Evaluation of GaN based Thin Film Transistor using TCAD Simulation
5. N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess
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