Abstract
This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN layer was grown via two-step growth. In the first step, the V/III ratio was applied at 1902 and then at 3046 in the second step. The FWHMs of the XRD (002) and (102) peaks of the GaN layer were around 205 arcsec ((002) peak) and 277 arcsec ((102) peak). Moreover, the surface of the GaN layer showed clear evidence of step flows, which resulted in the smooth surface of the layer as well as the overgrown of the AlGaN layer. Subsequently, the AlGaN/GaN heterostructure was fabricated into a lateral HEMT with wide gate-to-drain length (LGD). The device exhibited a clear working HEMT characteristic with high breakdown voltages up to 497 V. In comparison to many reported AlGaN/GaN HEMTs, no AlGaN interlayer was inserted in our AlGaN/GaN heterostructure. By improving the growth conditions for the two-step growth, the performance of AlGaN/GaN HEMTs could be improved further.
Funder
Ministry of Higher Education Malaysia for Fundamental Research
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Reference23 articles.
1. The 2018 GaN Power Electronics Roadmap;Amano;J. Phys. D Appl. Phys.,2018
2. Abid, I., Kabouche, R., Bougerol, C., Pernot, J., Masante, C., Comyn, R., Cordier, Y., and Medjdoub, F. (2019). High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates. Micromachines, 10.
3. Correlation between Threading Dislocation Density and Sheet Resistance of AlGaN/AlN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy;Kaun;Appl. Phys. Lett.,2012
4. Mechanistic Influence on Uniformity of Sheet Resistance of AlGaN/GaN HEMT Grown on Si Substrate with the Graded AlGaN Buffer Layers;Ma;Vacuum,2022
5. High Electron Mobility in AlGaN/GaN HEMT Grown on Sapphire: Strain Modification by Means of AlN Interlayers;Germain;MRS Online Proc. Libr.,2004
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献