Mechanistic influence on uniformity of sheet resistance of AlGaN/GaN HEMT grown on Si substrate with the graded AlGaN buffer layers
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference27 articles.
1. Preparation and properties of GaN:Al layers grown by radio-frequency magnetron sputter epitaxy;Shinoda;Vacuum,2017
2. Very-high power density AlGaN/GaN HEMTs;Yi-Feng;IEEE Trans. Electron. Dev.,2001
3. Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD;Li;Vacuum,2021
4. Effects of ultraviolet wavelength and intensity on AlGaN thin film surfaces irradiated simultaneously with CF4 plasma and ultraviolet;Kawakami;Vacuum,2019
5. Diffusion at AlN/Si interface and its suppression through substrate nitridation;Wei;Appl. Phys. Lett.,2020
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1. Effect of High Al Content AlGaN Buffer Layer on the Properties of GaN‐on‐Silicon Materials;physica status solidi (a);2023-11-22
2. Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors;Microelectronics Journal;2023-09
3. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD;Semiconductor Science and Technology;2023-02-22
4. Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT;Crystals;2023-01-03
5. Complementary Chemical Vapor Deposition Fabrication for Large‐Area Uniform Graphene Glass Fiber Fabric;Small Methods;2022-05-24
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