GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

Published:2014-02-20 Issue:4 Volume:29 Page:045011
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kaun Stephen W,Ahmadi Elaheh,Mazumder Baishakhi,Wu Feng,Kyle Erin C H,Burke Peter G,Mishra Umesh K,Speck James S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=4/a=045011/pdf

Reference64 articles.

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2. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

3. Current status of AlInN layers lattice-matched to GaN for photonics and electronics

4. GaN-Based RF Power Devices and Amplifiers

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