The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation-Reference-Cited by-同舟云学术

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation

Published:2021-10-20 Issue:1 Volume:8 Page:2100759
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Chen Yang¹,Shi Zhiming¹,Zhang Shanli¹,Ben Jianwei¹,Jiang Ke¹,Zang Hang¹,Jia Yuping¹,Lü Wei¹²,Li Dabing¹,Sun Xiaojuan¹^ORCID

Affiliation:

1. State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 P. R. China

2. Key Laboratory of Advanced Structural Materials Changchun University of Technology Changchun 130012 P. R. China

Funder

Chinese Academy of Sciences

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100759

Reference55 articles.