Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
Author:
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://www.nature.com/articles/lsa2017150.pdf
Reference34 articles.
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4. Guo X, Schubert EF . Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates. Appl Phys Lett 2001; 78: 3337–3339.
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