Effect and Regulation Mechanism of Post-deposition Annealing on the Ferroelectric Properties of AlScN Thin Films-Reference-Cited by-同舟云学术

Effect and Regulation Mechanism of Post-deposition Annealing on the Ferroelectric Properties of AlScN Thin Films

Published:2024-03-25 Issue:13 Volume:16 Page:16427-16435
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Mingrui¹,Zang Hang¹^ORCID,Jia Yuping¹,Jiang Ke¹^ORCID,Ben Jianwei¹,Lv Shunpeng¹,Li Dan¹,Sun Xiaojuan¹^ORCID,Li Dabing¹²^ORCID

Affiliation:

1. State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

National Key Research and Development Program of China

Jilin Provincial Scientific and Technological Development Program

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c17282

Reference53 articles.

1. Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement

2. Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

3. Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates

4. Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor

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