Megasonic-assisted development of nanostructures: Investigations on high aspect ratio nanoholes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1819986
Reference14 articles.
1. Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron‐beam lithography and polymethylmethacrylate resist
2. Fabrication of high aspect ratio silicon pillars of <10 nm diameter
3. Fabrication of <5 nm width lines in poly(methylmethacrylate) resist using a water:isopropyl alcohol developer and ultrasonically-assisted development
4. High-Reliability Lithography Performed by Ultrasonic and Surfactant-Added Developing System
5. Ultrasonic and dip resist development processes for 50 nm device fabrication
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1. Correlation of lithographic performance of the electron beam resists SML and ZEP with their chemical structure;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-07
2. Adhesive wafer bonding with photosensitive polymers for MEMS fabrication;Microsystem Technologies;2009-12-19
3. High density indium bumping using electrodeposition enhanced by megasonic agitation;2009 11th Electronics Packaging Technology Conference;2009-12
4. Adhesive wafer bonding using photosensitive polymer layers;SPIE Proceedings;2009-05-20
5. Megasonic enhanced wafer bumping process to enable high density electronics interconnection;2008 2nd Electronics Systemintegration Technology Conference;2008-09
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