Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron‐beam lithography and polymethylmethacrylate resist-Reference-Cited by-同舟云学术

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Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron‐beam lithography and polymethylmethacrylate resist

Published:1993-03-29 Issue:13 Volume:62 Page:1499-1501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Wei,Ahmed Haroon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.109609

Reference3 articles.

1. Resolution Limits of PMMA Resist for Exposure with 50 kV Electrons

2. 10‐nm linewidth electron beam lithography on GaAs

3. Nanowriter: A new high-voltage electron beam lithography system for nanometer-scale fabrication

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