Fabrication of <5 nm width lines in poly(methylmethacrylate) resist using a water:isopropyl alcohol developer and ultrasonically-assisted development
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1369615
Reference12 articles.
1. Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron‐beam lithography and polymethylmethacrylate resist
2. Fabrication of 3 nm wires using 100 keV electron beam lithography and poly(methyl methacrylate) resist
3. New high‐contrast developers for poly(methyl methacrylate) resist
4. Effect of molecular weight on poly(methyl methacrylate) resolution
5. Enhanced sensitivity in the electron beam resist poly(methyl methacrylate) using improved solvent developer
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