GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1544061
Reference12 articles.
1. Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy
4. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
5. A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate
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1. GaN- and AlGaN-based UV-LEDs on sapphire by metal-organic chemical vapor deposition;physica status solidi (c);2008-07
2. Effect of middle temperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metalorganic chemical vapor deposition;Journal of Crystal Growth;2007-03
3. Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD;Journal of Crystal Growth;2007-01
4. Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2006-02-17
5. Metalorganic chemical vapor phase epitaxy and structural properties of Ga1-xPxN on GaN/Si(111) substrates;Applied Physics A;2005-12-06
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