A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
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3. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
4. Anisotropic epitaxial lateral growth in GaN selective area epitaxy
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