Effect of middle temperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. 340–350 nm GaN-free UV-LEDs
2. GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition
3. Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition
4. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
5. Role of Dislocation in InGaN Phase Separation
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3. AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices;Superlattices and Microstructures;2018-01
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5. Relaxation of compressive strain by inclining threading dislocations in Al0.45Ga0.55N epilayer grown on AlN/sapphire templates using graded-AlxGa1−xN/AlN multi-buffer layers;Journal of Physics D: Applied Physics;2009-01-14
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