High-performance (Al0.4Ga0.6)2O3/Al0.32Ga0.68N-based UVC/UVB tunable dual-band photodetectors

Author:

Wu Siyu1,Wu Zhengyuan12ORCID,Tian Pengfei1,Hoo Jason3,Guo Shiping3,Fang Zhilai12ORCID

Affiliation:

1. Academy for Engineering and Technology, and School of Information Science and Technology, Fudan University, Shanghai 200433, China

2. Institute of Optoelectronics, Fudan University, Shanghai 200433, China

3. Advanced Micro-Fabrication Equipment Inc., 188 Taihua Road, Shanghai 201201, China

Abstract

Photodetectors fabricated from the (Al0.4Ga0.6)2O3/Al0.32Ga0.68N films manifest UVC (200 nm)/UVB (305 nm) tunable dual-band photodetection at 10–25 V and promising responsivity (0.35 A W−1) under 200 nm light illumination at 25 V.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

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