Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD-Reference-Cited by-同舟云学术

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Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD

Published:2007-01 Issue: Volume:298 Page:300-304
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sumiyoshi Kazuhide,Tsukihara Masashi,Kataoka Ken,Kawamichi Shuichi,Okimoto Tadashi,Nishino Katsushi,Naoi Yoshiki,Sakai Shiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Low‐dislocation density AlGaN layer by air‐bridged lateral epitaxial growth

2. Jpn. J. Appl. Phys.;Wu;Part,1996

3. Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

4. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

5. High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE

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