A hybrid self-aligned MIS-MESFET architecture for improved diamond-based transistors-Reference-Cited by-同舟云学术

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A hybrid self-aligned MIS-MESFET architecture for improved diamond-based transistors

Published:2020-11-16 Issue:20 Volume:117 Page:202101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Young Tack¹²^ORCID,Vardi Alon¹^ORCID,Tordjman Moshe¹³^ORCID

Affiliation:

1. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

2. Department of Electronic Engineering, Inha University, Incheon 22212, Korea

3. Solid State Institute and Physics Department, Technion-Israel Institute of Technology, Haifa 32000, Israel

Funder

Prof. Amar G. Bose Research Grant, at the Prof. J. A. del Alamo laboratories in the MTL, MIT

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0023662

Reference38 articles.

1. Diamond as an electronic material

2. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

3. 2D hole gas mobility at diamond/insulator interface

4. Doping and interface of homoepitaxial diamond for electronic applications

5. Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds

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1. J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications;ACS Nano;2024-04-17

2. Electronic and magnetic properties of Au-doped diamond surfaces by first-principles calculation;Physical Chemistry Chemical Physics;2024

3. Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs;Diamond and Related Materials;2023-10

4. Research progress of optoelectronic devices based on diamond materials;Frontiers in Physics;2023-08-10

5. Extremely high frequency Schottky diodes based on single GaN nanowires;Nanotechnology;2023-03-30

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