J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications-Reference-Cited by-同舟云学术

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J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications

Published:2024-04-17 Issue:17 Volume:18 Page:11404-11415
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Yu Si Eun¹,Lee Han Joo²,Kim Min-gu³^ORCID,Im Seongil²^ORCID,Lee Young Tack¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea

2. Van der Waals Materials Research Center, Department of Physics, Yonsei University, Seoul 03722, Republic of Korea

3. Department of Medical Engineering, College of Medicine, Yonsei University, Seoul 03722, Republic of Korea

Funder

National Research Foundation of Korea

Yonsei Signature Research Cluster Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c01450

Reference69 articles.

1. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms (Adv. Mater. 48/2022)

2. The Road for Two‐Dimensional Semiconductors in Silicon Age

3. Reducing the power consumption of two-dimensional logic transistors

4. Low-power-consumption organic field-effect transistors

5. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MoS₂/GaN Junction Field‐Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio via Thickness Engineering for Logic Inverters;Advanced Functional Materials;2024-09-06

2. Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor;Nano-Micro Letters;2024-08-09

3. Optoelectronic Neuromorphic Logic Memory Device Based on Ga₂O₃/MoS₂ Van der Waals Heterostructure with High Rectification and On/Off Ratios;Advanced Functional Materials;2024-07-30

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