Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates-Reference-Cited by-同舟云学术

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Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

Published:2010-07-15 Issue:2 Volume:108 Page:023516
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Suski T.,Staszczak G.,Grzanka S.,Czernecki R.,Litwin-Staszewska E.,Piotrzkowski R.,Dmowski L. H.,Khachapuridze A.,Kryśko M.,Perlin P.,Grzegory I.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3466768

Reference20 articles.

1. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

2. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

3. Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers

4. Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding

5. Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

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1. Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range;Micromachines;2022-10-26

2. Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review;Materials Science in Semiconductor Processing;2022-06

3. Introduction to Gallium Nitride Properties and Applications;Nitride Semiconductor Technology;2020-08-03

4. The activation energy for Mg acceptor in AlxGa1-xN alloys in the whole composition range;Superlattices and Microstructures;2017-09

5. Monolithic cyan − violet InGaN/GaN LED array;physica status solidi (a);2017-04-27

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