The activation energy for Mg acceptor in AlxGa1-xN alloys in the whole composition range-Reference-Cited by-同舟云学术

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The activation energy for Mg acceptor in AlxGa1-xN alloys in the whole composition range

Published:2017-09 Issue: Volume:109 Page:758-762
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhao Chuan-Zhen,Wei Tong,Chen Li-Ying,Wang Sha-Sha,Wang Jun

Funder

National Nature Science Foundation of China

Tianjin Research Program of Application Foundation and Advanced Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference37 articles.

1. p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy

2. Optical and electrical properties of Mg-doped p-type AlxGa1−xN

3. Thermal ionization energy of Si and Mg in AlGaN

4. Investigation of optical and electrical properties of Mg-doped p-InxGa1−xN, p-GaN and p-AlyGa1−yN grown by MOCVD

5. Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys

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