Investigation of optical and electrical properties of Mg-doped p-InxGa1−xN, p-GaN and p-AlyGa1−yN grown by MOCVD-Reference-Cited by-同舟云学术

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Investigation of optical and electrical properties of Mg-doped p-InxGa1−xN, p-GaN and p-AlyGa1−yN grown by MOCVD

Published:2004-12 Issue:1-4 Volume:272 Page:455-459
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee Sung-Nam,Son JoongKon,Sakong Tan,Lee Wonseok,Paek Hosun,Yoon Euijoon,Kim Jiyoung,Cho Yong-Hoon,Nam Okhyun,Park Yongjo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD

2. Characterization of optical and electrical quality of Mg-doped InxGa1−xN grown by MOCVD

3. Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

4. Optical and electrical properties of Mg-doped p-type AlxGa1−xN

5. p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy

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