Improvement of the optoelectronic characteristics in deep-ultraviolet laser diodes with tapered p-cladding layer and triangular electron blocking layer-Reference-Cited by-同舟云学术

Improvement of the optoelectronic characteristics in deep-ultraviolet laser diodes with tapered p-cladding layer and triangular electron blocking layer

Published:2022-10-11 Issue:11 Volume:128 Page:
ISSN:0946-2171
Container-title:Applied Physics B
language:en
Short-container-title:Appl. Phys. B

Author:

Xing Zhongqiu^ORCID,Wang Yao,Wang Fang,Liou Juin J.,Liu Yuhuai

Funder

the Special Project for Inter-government Collaboration of State Key Research and Development Program

Zhengzhou 1125 Innovation Project

Ningbo 2025 Key Innovation Project

the National Natural Science Foundation of China Henan provincial joint fund key project

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://link.springer.com/content/pdf/10.1007/s00340-022-07906-8.pdf

Reference40 articles.

1. B. Melanson, C. Liu, J. Zhang, Analysis of InGaN-delta-InN quantum wells on InGaN substrates for red light emitting diodes and lasers. IEEE Photon. J. 13, 3053484 (2021)

2. A.S. Paliwal, K. Singh, M. Mathew, Effects of AlInN graded polarization dependent doped top cladding on the performance of deep UV laser diode emitting at ~271 nm wavelength. Semicond. Sci. Technol. 36, 015006 (2020)

3. M.M. Satter, Z. Lochner, T.T. Kao, AlGaN-based vertical injection nanowire laser diodes using inverse tapered p-waveguide for efficient hole transport. IEEE J. Quantum Electron. 50, 166–173 (2014)

4. Y. Hou, D. Zhao, F. Liang, Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure. Opt. Mater. 110, 110477 (2020)

5. A. St, B. Ksa, A. Sy, A. Yo, A. Mi, A. Tt, Effects of mg and si doping in the guide layers of algan-based ultraviolet-B band lasers. J. Cryst. Growth 535, 125537 (2020)

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