Characterization of optical and electrical quality of Mg-doped InxGa1−xN grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer
2. Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature
3. Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy
4. Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)
5. Characterization of p-type InxGa1−xN grown by metalorganic chemical vapor deposition
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1. Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review;Materials Science in Semiconductor Processing;2022-06
2. Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD;Materials;2021-09-16
3. Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells;Solar Energy Materials and Solar Cells;2014-11
4. Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells;IEEE Journal of Photovoltaics;2014-03
5. Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire;Journal of Crystal Growth;2007-09
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