Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
3. Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
4. GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices
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1. Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films;Chinese Physics B;2023-12-01
2. Monolithic Multicolor Emissions of InGaN-Based Hybrid Light-Emitting Diodes Using CsPbBr3 Green Quantum Dots;Materials;2023-02-02
3. Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE;Crystal Growth & Design;2022-08-04
4. Improvement in structural and electrical characteristics of nonpolar a-plane Si-doped n-AlGaN;Journal of Materials Science;2020-06-11
5. High hole concentration in nonpolar a-plane p-AlGaN films with Mg-delta doping technique;Superlattices and Microstructures;2017-09
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