Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN-Reference-Cited by-同舟云学术

Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

Published:2005-01-17 Issue:3 Volume:86 Page:031901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chakraborty Arpan,Keller Stacia,Meier Cedrik,Haskell Benjamin A.,Keller Salka,Waltereit Patrick,DenBaars Steven P.,Nakamura Shuji,Speck James S.,Mishra Umesh K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1851007

Reference15 articles.

1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

2. Spontaneous polarization and piezoelectric constants of III-V nitrides

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates

5. Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition

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