GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices-Reference-Cited by-同舟云学术

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GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

Published:2003-09-29 Issue:13 Volume:83 Page:2599-2601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun W. H.,Yang J. W.,Chen C. Q.,Zhang J. P.,Gaevski M. E.,Kuokstis E.,Adivarahan V.,Wang H. M.,Gong Z.,Su M.,Khan M. Asif

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1614835

Reference12 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Piezoelectric doping in AlInGaN/GaN heterostructures

3. Substrates for gallium nitride epitaxy

4. Electronic band structure of wurtzite GaN under biaxial strain in theMplane investigated with photoreflectance spectroscopy

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1. InGaN/AlInN interface with enhanced holes to improve photoelectrochemical etching and GaN device release;Semiconductor Science and Technology;2023-03-31

2. Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11–22) AlN film grown by HVPE;Frontiers in Physics;2022-11-23

3. Modern Advancements and Application of GaN-Based Materials;Advances in Power Systems and Energy Management;2021

4. Investigation of GaN-based light-emitting diodes on various substrates;Gallium Nitride Materials and Devices XIII;2018-02-23

5. Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells;Journal of Applied Physics;2016-08-07

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