Piezoelectric doping in AlInGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125156
Reference9 articles.
1. The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure
2. Pyroelectricity in gallium nitride thin films
3. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
4. Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
5. Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors
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1. Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si;Journal of Applied Physics;2019-06-14
2. Electronic Devices Based on Group III Nitrides ☆;Reference Module in Materials Science and Materials Engineering;2018
3. Compositionally graded ferroelectrics as wide band gap semiconductors: Electrical domain structures and the origin of low dielectric loss;Acta Materialia;2017-01
4. Surface properties of AlInGaN/GaN heterostructure;Materials Science in Semiconductor Processing;2016-11
5. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells;Optics Express;2015-03-17
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