Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si-Reference-Cited by-同舟云学术

Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si

Published:2019-06-14 Issue:22 Volume:125 Page:225707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Biswas Debaleen¹^ORCID,Fujita Hirotaka¹,Torii Naoki¹,Egawa Takashi¹²

Affiliation:

1. Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan

2. Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Nagoya 466-8555, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5098365

Reference37 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

3. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

4. High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

5. Al composition dependent properties of quaternary AlInGaN Schottky diodes

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