Characterization of p-type InxGa1−xN grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Characterization of p-type InxGa1−xN grown by metalorganic chemical vapor deposition

Published:2001-03 Issue:3 Volume:45 Page:427-430
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wen T.C.,Lee W.I.,Sheu J.K.,Chi G.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Hole conductivity and compensation in epitaxial GaN:Mg layers

2. p‐type conduction in Mg‐doped Ga0.91In0.09N grown by metalorganic vapor‐phase epitaxy

3. Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)

4. Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature

5. High-transparency Ni/Au ohmic contact to p-type GaN

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4. InGaN Solar Cells: Present State of the Art and Important Challenges;IEEE Journal of Photovoltaics;2012-07

5. Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates;Journal of Applied Physics;2010-07-15

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