Composition dependence of band alignment and dielectric constant for Hf1−xTixO2 thin films on Si (100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3380588
Reference30 articles.
1. Comparison of interfacial and electrical characteristics of HfO2 and HfAlO high-k dielectrics on compressively strained Si1−xGex
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4. Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors
5. Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator
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