Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2227630
Reference19 articles.
1. Hafnium and zirconium silicates for advanced gate dielectrics
2. Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
3. Band structures and band offsets of high K dielectrics on Si
4. Thermodynamic stability of binary oxides in contact with silicon
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