Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3391181
Reference18 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
2. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
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4. Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors
5. Interfacial oxide growth at silicon∕high-k oxide interfaces: First principles modeling of the Si–HfO2 interface
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