In-plane optical anisotropy in InxGa1−xN∕GaN multiple quantum wells induced by Pockels effect
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1841477
Reference26 articles.
1. Electrical characteristics of InGaN∕GaN light-emitting diodes grown on GaN and sapphire substrates
2. InGaN∕GaN single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions
3. Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition
4. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
5. Mechanism of luminescence in InGaN/GaN multiple quantum wells
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical in-plane anisotropy of ZnO/(Zn,Mg)O quantum wells grown ona-plane sapphire: Implications for optical spin control;Physical Review B;2014-02-05
2. Symmetrically tunable optical properties of InGaN/GaN multiple quantum disks by an external stress;Applied Physics Letters;2012-04-23
3. Sixfold symmetry of excitonic transition energies in c-plane for wurtzite GaN;Applied Physics Letters;2008-10-13
4. Mechanism Underlying Damage Induced in Gallium Nitride Epilayer during Laser Lift-Off Process;Japanese Journal of Applied Physics;2008-02-15
5. Optically modulated internal strain in InGaN quantum dots grown on SiNx nano masks;Optics Express;2008
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3