Mechanism Underlying Damage Induced in Gallium Nitride Epilayer during Laser Lift-Off Process-Reference-Cited by-同舟云学术

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Mechanism Underlying Damage Induced in Gallium Nitride Epilayer during Laser Lift-Off Process

Published:2008-02-15 Issue:2 Volume:47 Page:930-932
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Ko-Tao,Lee Yeeu-Chang,Tu Sheng-Han,Lin Ching-Liang,Chen Po-Hen,Liu Cheng-Yi,Chang Jeng-Yang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference7 articles.

1. Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate

2. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

3. InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

4. Study of GaN light-emitting diodes fabricated by laser lift-off technique

5. Optical Process for Liftoff of Group III-Nitride Films

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of initial crystalline phase of TiO2 to obtain TiN thin films from sol-gel route by rapid thermal nitridation process;Progress in Solid State Chemistry;2024-09

2. Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser;Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIX;2024-03-12

3. Spatiotemporal evolution of high-aspect-ratio filamentary trace in sapphire of picosecond pulse burst-mode for laser lift-off;Journal of Central South University;2022-10

4. Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene;ACS Applied Materials & Interfaces;2022-01-03

5. Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique;Microsystems & Nanoengineering;2021-04-23

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