InGaN∕GaN single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions-Reference-Cited by-同舟云学术

InGaN∕GaN single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions

Published:2004-06-21 Issue:25 Volume:84 Page:5252-5254
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Florescu D. I.,Ramer J. C.,Lee D. S.,Armour E. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1765743

Reference11 articles.

1. GaN: Processing, defects, and devices

2. Optical bandgap energy of wurtzite InN

3. III–nitrides: Growth, characterization, and properties

4. Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire

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