Mechanism of luminescence in InGaN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126758
Reference26 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Nitride-based semiconductors for blue and green light-emitting devices
4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
5. Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells
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