Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123789
Reference23 articles.
1. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
2. Violet‐blue GaN homojunction light emitting diodes with rapid thermal annealed p‐type layers
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. Direct observation of the core structures of threading dislocations in GaN
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2. Regression Analysis for Transport Electron Scattering Caused by Structural Defects in InSb Quantum Wells: Application of Matthiessen's Formula;Japanese Journal of Applied Physics;2012-06-20
3. Regression Analysis for Transport Electron Scattering Caused by Structural Defects in InSb Quantum Wells: Application of Matthiessen's Formula;Japanese Journal of Applied Physics;2012-06-01
4. Investigation of GaN Films Grown on Liquid-Phase Deposited SiO2Nanopatterned Sapphire Substrates;ECS Journal of Solid State Science and Technology;2012
5. Electron scattering by structural defects in InSb quantum wells: Analysis with simplified Mayadas-Shatzkes equation;Journal of Applied Physics;2011-11
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