Electron scattering by structural defects in InSb quantum wells: Analysis with simplified Mayadas-Shatzkes equation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3656693
Reference37 articles.
1. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
2. Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording
3. Lateral light emitting n-i-p diodes in InSb∕AlxIn1−xSb quantum wells
4. Uncooled InSb mid-infrared LED used dislocation filtering of AlInSb layer
5. High performance miniaturized InSb photovoltaic infrared sensors operating at room temperature
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1. Size-induced twinning in InSb semiconductor during room temperature deformation;Scientific Reports;2021-10-01
2. Optimization of metamorphic buffers for MBE growth of high quality AlInSb/InSb quantum structures: Suppression of hillock formation;Journal of Crystal Growth;2017-11
3. Regression Analysis for Transport Electron Scattering Caused by Structural Defects in InSb Quantum Wells: Application of Matthiessen's Formula;Japanese Journal of Applied Physics;2012-06-20
4. Regression Analysis for Transport Electron Scattering Caused by Structural Defects in InSb Quantum Wells: Application of Matthiessen's Formula;Japanese Journal of Applied Physics;2012-06-01
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