Investigation of GaN Films Grown on Liquid-Phase Deposited SiO2Nanopatterned Sapphire Substrates
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
2. Improved Performance of GaN-Based LEDs by Covering Top C-Plane of Patterned Sapphire Substrate with Oxide Layer
3. Enhanced Performance of LEDs Using Periodic Tent-Like Post Patterns on A-plane Sapphire Substrates
4. Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells
5. Electrical characterization of GaN p-n junctions with and without threading dislocations
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1. Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules;IEEE Transactions on Electron Devices;2023-09
2. Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant;ECS Journal of Solid State Science and Technology;2019-10-29
3. Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant;Micromachines;2018-11-26
4. Surface modification of metal mesh with SiO2 films for enhanced corrosion protection;International Journal of Applied Ceramic Technology;2017-07-10
5. Growth of GaN on {125}-like Facets of Patterned Sapphire Substrate;ECS Journal of Solid State Science and Technology;2017
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