Characterization of the TiW‐GaAs interface after rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343789
Reference20 articles.
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2. TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's
3. TiW nitride thermally stable Schottky contacts to GaAs: Characterization and application to self-aligned gate field-effect transistor fabrication
4. TiW silicide-gate technology for self-aligned GaAs FET
5. Schottky barrier degradation of the W/GaAs system after high‐temperature annealing
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1. Laser and Thermal Annealing Effects on the Optical Properties of n-GaAs [100] Crystals: Application to Its Schottky Diodes;physica status solidi (a);2000-10
2. Integration of microstructures onto negative electron affinity cathodes: Fabrication and operation of an addressable negative electron affinity cathode;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11
3. Enhancement of the Metal/Si-Doped AlGaAs Schottky Barrier Height by CH4/H2 Reactive Ion Etching;MRS Proceedings;1993
4. Tem Analysis of Interfacial Reactions Between TiWn, Wn Gate Metallizations and GaAs in Mesfet Devices;MRS Proceedings;1993
5. Interactions between binary metallic alloys and Si, GeSi and GaAs;Materials Science Reports;1992-01
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