Schottky barrier degradation of the W/GaAs system after high‐temperature annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337744
Reference17 articles.
1. Effect of alloying behavior on the electrical characteristics of n‐GaAs Schottky diodes metallized with W, Au, and Pt
2. Interface chemistry and electrical properties of tungsten Schottky‐barrier contacts to GaAs
3. The thermal stability of thin layer transition and refractory metallizations on GaAs
4. High Temperature Stable W-GaAs Schottky Barrier
5. Characteristics of WN/GaAs Schottky Contacts Formed by Reactive RF Sputtering
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