TiW nitride thermally stable Schottky contacts to GaAs: Characterization and application to self-aligned gate field-effect transistor fabrication
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Published:1987-11
Issue:6
Volume:5
Page:1701
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Geissberger A. E.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
31 articles.
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