Measurement of electron saturation velocity in Ga0.52In0.48P in a double heterojunction bipolar transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1428100
Reference21 articles.
1. GaInP/GaAs double heterojunction bipolar transistor with high f/sub T/, f/sub max/, and breakdown voltage
2. Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base
3. Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications
4. Calculated electron and hole steady‐state drift velocities in lattice matched GaInP and AlGaInP
5. Electron transport properties of Ga/sub 0.51/In/sub 0.49/P for device applications
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Current Gain and Offset Voltage in an InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor;IEEE Transactions on Electron Devices;2012-12
2. Kirk effect mechanism in type-II InP∕GaAsSb double heterojunction bipolar transistors;Journal of Applied Physics;2007-09-15
3. High current effects in double heterojunction bipolar transistors;Semiconductor Science and Technology;2005-03-15
4. Unified explanation for suppressed electron ionization coefficient and its weak temperature dependence in InGaP;Applied Physics Letters;2004-10-11
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